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Garfield 0.3
Toolkit for the detailed simulation of particle detectors based on ionization measurement in gases and semiconductors
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Gallium-Nitride. More...
#include <MediumGaN.hh>
Public Member Functions | |
MediumGaN () | |
Constructor. | |
virtual | ~MediumGaN () |
Destructor. | |
bool | IsSemiconductor () const override |
void | GetComponent (const unsigned int i, std::string &label, double &f) override |
bool | ElectronVelocity (const double ex, const double ey, const double ez, const double bx, const double by, const double bz, double &vx, double &vy, double &vz) override |
bool | ElectronTownsend (const double ex, const double ey, const double ez, const double bx, const double by, const double bz, double &alpha) override |
bool | ElectronAttachment (const double ex, const double ey, const double ez, const double bx, const double by, const double bz, double &eta) override |
double | ElectronMobility () override |
bool | HoleVelocity (const double ex, const double ey, const double ez, const double bx, const double by, const double bz, double &vx, double &vy, double &vz) override |
bool | HoleTownsend (const double ex, const double ey, const double ez, const double bx, const double by, const double bz, double &alpha) override |
bool | HoleAttachment (const double ex, const double ey, const double ez, const double bx, const double by, const double bz, double &eta) override |
double | HoleMobility () override |
void | SetElectronConcentration (const double c) |
Set the electron concentration [cm-3]. | |
void | SetLowFieldMobility (const double mue, const double muh) |
Set the low-field mobility values [cm2 / (V ns)] explicitly. | |
void | UnsetLowFieldMobility () |
Use the default mobility models. |
Private Member Functions | |
void | UpdateTransportParameters () |
Private Attributes | |
double | m_eMobility = 1.405e-6 |
double | m_hMobility = 0.170e-6 |
double | m_eDensity = 7.78e16 |
double | m_eHallFactor = 1. |
double | m_hHallFactor = 1. |
double | m_eImpactA = 1.5e5 |
double | m_hImpactA = 6.4e5 |
double | m_eImpactB = 1.41e7 |
double | m_hImpactB = 1.46e7 |
bool | m_userMobility = false |
Gallium-Nitride.
Definition at line 10 of file MediumGaN.hh.
Garfield::MediumGaN::MediumGaN | ( | ) |
Constructor.
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override |
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inlineoverride |
Definition at line 32 of file MediumGaN.hh.
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inlineoverride |
Definition at line 43 of file MediumGaN.hh.
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inlineoverride |
Definition at line 17 of file MediumGaN.hh.
void Garfield::MediumGaN::SetElectronConcentration | ( | const double | c | ) |
Set the electron concentration [cm-3].
void Garfield::MediumGaN::SetLowFieldMobility | ( | const double | mue, |
const double | muh ) |
Set the low-field mobility values [cm2 / (V ns)] explicitly.
void Garfield::MediumGaN::UnsetLowFieldMobility | ( | ) |
Use the default mobility models.
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private |
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Definition at line 59 of file MediumGaN.hh.
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Definition at line 62 of file MediumGaN.hh.
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Definition at line 68 of file MediumGaN.hh.
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Definition at line 70 of file MediumGaN.hh.
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Definition at line 55 of file MediumGaN.hh.
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Definition at line 63 of file MediumGaN.hh.
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Definition at line 69 of file MediumGaN.hh.
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Definition at line 71 of file MediumGaN.hh.
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Definition at line 56 of file MediumGaN.hh.
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Definition at line 73 of file MediumGaN.hh.