Solid crystalline silicon More...

#include <MediumSilicon.hh>

Inheritance diagram for Garfield::MediumSilicon:

Classes
struct	Band

Public Member Functions
	MediumSilicon ()
	Constructor.
virtual	~MediumSilicon ()
	Destructor.
bool	IsSemiconductor () const override
void	SetDoping (const char type, const double c)
	Set doping concentration [cm-3] and type ('i', 'n', 'p').
void	GetDoping (char &type, double &c) const
	Retrieve doping concentration.
void	SetTrapCrossSection (const double ecs, const double hcs)
	Trapping cross-sections for electrons and holes.
void	SetTrapDensity (const double n)
	Trap density [cm-3], by default set to zero.
void	SetTrappingTime (const double etau, const double htau)
	Set time constant for trapping of electrons and holes [ns].
void	SetLowFieldMobility (const double mue, const double muh)
	Specify the low field values of the electron and hole mobilities.
void	SetLatticeMobilityModel (const std::string &model)
	Set the parameterisation to be used for calculating the lattice mobility model.
void	SetLatticeMobilityModelMinimos ()
	Calculate the lattice mobility using the Minimos model.
void	SetLatticeMobilityModelSentaurus ()
	Calculate the lattice mobility using the Sentaurus model (default).
void	SetLatticeMobilityModelReggiani ()
	Calculate the lattice mobility using the Reggiani model.
void	SetDopingMobilityModelMinimos ()
	Use the Minimos model for the doping-dependence of the mobility.
void	SetDopingMobilityModelMasetti ()
	Use the Masetti model for the doping-dependence of the mobility (default).
void	SetSaturationVelocity (const double vsate, const double vsath)
	Specify the saturation velocities of electrons and holes.
void	SetSaturationVelocityModelMinimos ()
	Calculate the saturation velocities using the Minimos model.
void	SetSaturationVelocityModelCanali ()
	Calculate the saturation velocities using the Canali model (default).
void	SetSaturationVelocityModelReggiani ()
	Calculate the saturation velocities using the Reggiani model.
void	SetHighFieldMobilityModel (const std::string &model)
	Set the parameterisation to be used for the drift velocity as function of the electric field.
void	SetHighFieldMobilityModelMinimos ()
	Parameterize the high-field mobility using the Minimos model.
void	SetHighFieldMobilityModelCanali ()
	Parameterize the high-field mobility using the Canali model (default).
void	SetHighFieldMobilityModelReggiani ()
	Parameterize the high-field mobility using the Reggiani model.
void	SetHighFieldMobilityModelConstant ()
	Make the velocity proportional to the electric field (no saturation).
void	SetImpactIonisationModel (const std::string &model)
	Set the parameterisation to be used for calculating the impact ionisation coefficient.
void	SetImpactIonisationModelVanOverstraetenDeMan ()
	Calculate α using the van Overstraeten-de Man model (default).
void	SetImpactIonisationModelGrant ()
	Calculate α using the Grant model.
void	SetImpactIonisationModelMassey ()
	Calculate α using the Massey model.
void	SetImpactIonisationModelOkutoCrowell ()
	Calculate α using the Okuto-Crowell model.
void	SetDiffusionScaling (const double d)
	Apply a scaling factor to the diffusion coefficients.
bool	SetMaxElectronEnergy (const double e)
double	GetMaxElectronEnergy () const
bool	Initialise ()
void	EnableScatteringRateOutput (const bool on=true)
void	EnableNonParabolicity (const bool on=true)
void	EnableFullBandDensityOfStates (const bool on=true)
void	EnableAnisotropy (const bool on=true)
bool	ElectronVelocity (const double ex, const double ey, const double ez, const double bx, const double by, const double bz, double &vx, double &vy, double &vz) override
bool	ElectronTownsend (const double ex, const double ey, const double ez, const double bx, const double by, const double bz, double &alpha) override
bool	ElectronAttachment (const double ex, const double ey, const double ez, const double bx, const double by, const double bz, double &eta) override
double	ElectronMobility () override
bool	HoleVelocity (const double ex, const double ey, const double ez, const double bx, const double by, const double bz, double &vx, double &vy, double &vz) override
bool	HoleTownsend (const double ex, const double ey, const double ez, const double bx, const double by, const double bz, double &alpha) override
bool	HoleAttachment (const double ex, const double ey, const double ez, const double bx, const double by, const double bz, double &eta) override
double	HoleMobility () override
double	GetElectronEnergy (const double px, const double py, const double pz, double &vx, double &vy, double &vz, const int band=0) override
void	GetElectronMomentum (const double e, double &px, double &py, double &pz, int &band) override
double	GetElectronNullCollisionRate (const int band) override
double	GetElectronCollisionRate (const double e, const int band) override
bool	ElectronCollision (const double e, int &type, int &level, double &e1, double &dx, double &dy, double &dz, std::vector< Secondary > &secondaries, int &band) override
void	ResetCollisionCounters ()
unsigned int	GetNumberOfElectronCollisions () const
unsigned int	GetNumberOfLevels () const
unsigned int	GetNumberOfElectronCollisions (const unsigned int level) const
unsigned int	GetNumberOfElectronBands () const
int	GetElectronBandPopulation (const int band)
bool	GetOpticalDataRange (double &emin, double &emax, const unsigned int i=0) override
bool	GetDielectricFunction (const double e, double &eps1, double &eps2, const unsigned int i=0) override
void	ComputeSecondaries (const double e0, double &ee, double &eh)

Private Types
enum class	LatticeMobility { Sentaurus = 0 , Minimos , Reggiani }
enum class	DopingMobility { Minimos = 0 , Masetti }
enum class	SaturationVelocity { Minimos = 0 , Canali , Reggiani }
enum class	HighFieldMobility { Minimos = 0 , Canali , Reggiani , Constant }
enum class	ImpactIonisation { VanOverstraeten = 0 , Grant , Massey , Okuto }

Private Member Functions
bool	Update ()
void	UpdateLatticeMobility ()
void	UpdateDopingMobilityMinimos ()
void	UpdateDopingMobilityMasetti ()
void	UpdateSaturationVelocity ()
void	UpdateHighFieldMobilityCanali ()
void	UpdateImpactIonisation ()
double	ElectronMobility (const double e) const
double	ElectronAlpha (const double e) const
double	HoleMobility (const double e) const
double	HoleAlpha (const double e) const
bool	LoadOpticalData (const std::string &filename)
bool	ElectronScatteringRates ()
bool	HoleScatteringRates ()
bool	AcousticScatteringRates (const double rho, const double kbt, const double dp, Band &band)
bool	OpticalScatteringRates (const double rho, const double kbt, const double dtk, const double eph, Band &band)
bool	IntervalleyScatteringRates (const double rho, const double kbt, const double dtk, const double eph, Band &bndI, Band &bndF, const double zF, const int collType)
bool	IonisationRates (const std::vector< double > &p, const std::vector< double > &eth, const std::vector< double > &b, Band &band)
bool	ImpurityScatteringRates (const double kbt, Band &band)
void	InitialiseDOS ()
void	ComputeDOS ()

Private Attributes
std::mutex	m_mutex
double	m_diffScale = 1.
double	m_bandGap = 1.12
char	m_dopingType = 'i'
double	m_cDop = 0.
double	m_eMuLat = 1.35e-6
double	m_hMuLat = 0.45e-6
double	m_eMu = 1.35e-6
double	m_hMu = 0.45e-6
double	m_eBetaCanali = 1.109
double	m_hBetaCanali = 1.213
double	m_eBetaCanaliInv = 1. / 1.109
double	m_hBetaCanaliInv = 1. / 1.213
double	m_eVs = 1.02e-2
double	m_hVs = 0.72e-2
double	m_eRs = 1.35e-6 / 1.02e-2
double	m_hRs = 0.45e-6 / 0.72e-2
double	m_eHallFactor = 1.15
double	m_hHallFactor = 0.7
double	m_eTrapCs = 1.e-15
double	m_hTrapCs = 1.e-15
double	m_eTrapDensity = 0.
double	m_hTrapDensity = 0.
double	m_eTrapTime = 0.
double	m_hTrapTime = 0.
double	m_eTrapRate = 0.
double	m_hTrapRate = 0.
int	m_trappingModel = 0
double	m_eImpactA0 = 3.318e5
double	m_eImpactA1 = 0.703e6
double	m_eImpactA2 = 0.
double	m_eImpactB0 = 1.135e6
double	m_eImpactB1 = 1.231e6
double	m_eImpactB2 = 0.
double	m_hImpactA0 = 1.582e6
double	m_hImpactA1 = 0.671e6
double	m_hImpactB0 = 2.036e6
double	m_hImpactB1 = 1.693e6
bool	m_hasUserMobility = false
bool	m_hasUserSaturationVelocity = false
LatticeMobility	m_latticeMobilityModel = LatticeMobility::Sentaurus
DopingMobility	m_dopingMobilityModel = DopingMobility::Masetti
SaturationVelocity	m_saturationVelocityModel = SaturationVelocity::Canali
HighFieldMobility	m_highFieldMobilityModel = HighFieldMobility::Canali
ImpactIonisation	m_impactIonisationModel = ImpactIonisation::VanOverstraeten
bool	m_cfOutput = false
bool	m_nonParabolic = true
bool	m_fullBandDos = false
bool	m_anisotropic = true
std::array< Band, 3 >	m_cb
std::vector< size_t >	m_cbIndex
Band	m_vb
unsigned int	m_nCollElectronAcoustic = 0
unsigned int	m_nCollElectronOptical = 0
unsigned int	m_nCollElectronIntervalley = 0
unsigned int	m_nCollElectronImpurity = 0
unsigned int	m_nCollElectronIonisation = 0
std::vector< unsigned int >	m_nCollElectronDetailed
std::vector< unsigned int >	m_nCollElectronBand
double	m_eStepDos = 0.
double	m_invStepDos = 0.
std::vector< double >	m_fbDosV
std::vector< double >	m_fbDosC
double	m_fbDosMaxV
double	m_fbDosMaxC
std::string	m_opticalDataFile = "OpticalData_Si.txt"
std::vector< double >	m_egamma
std::vector< double >	m_eps1
std::vector< double >	m_eps2

Detailed Description

Solid crystalline silicon

Definition at line 14 of file MediumSilicon.hh.

Member Enumeration Documentation

◆ DopingMobility

enum class Garfield::MediumSilicon::DopingMobility

strongprivate

Enumerator
Minimos
Masetti

Definition at line 181 of file MediumSilicon.hh.

181{ Minimos = 0, Masetti };

◆ HighFieldMobility

enum class Garfield::MediumSilicon::HighFieldMobility

strongprivate

Enumerator
Minimos
Canali
Reggiani
Constant

Definition at line 183 of file MediumSilicon.hh.

183{ Minimos = 0, Canali, Reggiani, Constant };

◆ ImpactIonisation

enum class Garfield::MediumSilicon::ImpactIonisation

strongprivate

Enumerator
VanOverstraeten
Grant
Massey
Okuto

Definition at line 184 of file MediumSilicon.hh.

184{ VanOverstraeten = 0, Grant, Massey, Okuto };

◆ LatticeMobility

enum class Garfield::MediumSilicon::LatticeMobility

strongprivate

Enumerator
Sentaurus
Minimos
Reggiani

Definition at line 180 of file MediumSilicon.hh.

180{ Sentaurus = 0, Minimos, Reggiani };

◆ SaturationVelocity

enum class Garfield::MediumSilicon::SaturationVelocity

strongprivate

Enumerator
Minimos
Canali
Reggiani

Definition at line 182 of file MediumSilicon.hh.

182{ Minimos = 0, Canali, Reggiani };

Constructor & Destructor Documentation

◆ MediumSilicon()

Garfield::MediumSilicon::MediumSilicon ( )

Constructor.

◆ ~MediumSilicon()

virtual Garfield::MediumSilicon::~MediumSilicon ( )

inlinevirtual

Destructor.

Definition at line 19 of file MediumSilicon.hh.

19{}

Member Function Documentation

◆ AcousticScatteringRates()

bool Garfield::MediumSilicon::AcousticScatteringRates	(	const double	rho,
		const double	kbt,
		const double	dp,
		Band &	band )

private

◆ ComputeDOS()

void Garfield::MediumSilicon::ComputeDOS ( )

private

◆ ComputeSecondaries()

void Garfield::MediumSilicon::ComputeSecondaries	(	const double	e0,
		double &	ee,
		double &	eh )

◆ ElectronAlpha()

double Garfield::MediumSilicon::ElectronAlpha ( const double e ) const

private

◆ ElectronAttachment()

bool Garfield::MediumSilicon::ElectronAttachment	(	const double	ex,
		const double	ey,
		const double	ez,
		const double	bx,
		const double	by,
		const double	bz,
		double &	eta )

override

◆ ElectronCollision()

bool Garfield::MediumSilicon::ElectronCollision	(	const double	e,
		int &	type,
		int &	level,
		double &	e1,
		double &	dx,
		double &	dy,
		double &	dz,
		std::vector< Secondary > &	secondaries,
		int &	band )

override

◆ ElectronMobility() [1/2]

double Garfield::MediumSilicon::ElectronMobility ( )

inlineoverride

Definition at line 128 of file MediumSilicon.hh.

128{ return m_eMu; }

Garfield::MediumSilicon::m_eMu

double m_eMu

Definition MediumSilicon.hh:201

◆ ElectronMobility() [2/2]

double Garfield::MediumSilicon::ElectronMobility ( const double e ) const

private

◆ ElectronScatteringRates()

bool Garfield::MediumSilicon::ElectronScatteringRates ( )

private

◆ ElectronTownsend()

bool Garfield::MediumSilicon::ElectronTownsend	(	const double	ex,
		const double	ey,
		const double	ez,
		const double	bx,
		const double	by,
		const double	bz,
		double &	alpha )

override

◆ ElectronVelocity()

bool Garfield::MediumSilicon::ElectronVelocity	(	const double	ex,
		const double	ey,
		const double	ez,
		const double	bx,
		const double	by,
		const double	bz,
		double &	vx,
		double &	vy,
		double &	vz )

override

◆ EnableAnisotropy()

void Garfield::MediumSilicon::EnableAnisotropy ( const bool on = true )

inline

Definition at line 116 of file MediumSilicon.hh.

116{ m_anisotropic = on; }

Garfield::MediumSilicon::m_anisotropic

bool m_anisotropic

Definition MediumSilicon.hh:254

◆ EnableFullBandDensityOfStates()

void Garfield::MediumSilicon::EnableFullBandDensityOfStates ( const bool on = true )

inline

Definition at line 113 of file MediumSilicon.hh.

                                                           {
    m_fullBandDos = on;
  }

◆ EnableNonParabolicity()

void Garfield::MediumSilicon::EnableNonParabolicity ( const bool on = true )

inline

Definition at line 112 of file MediumSilicon.hh.

112{ m_nonParabolic = on; }

Garfield::MediumSilicon::m_nonParabolic

bool m_nonParabolic

Definition MediumSilicon.hh:252

◆ EnableScatteringRateOutput()

void Garfield::MediumSilicon::EnableScatteringRateOutput ( const bool on = true )

inline

Definition at line 111 of file MediumSilicon.hh.

111{ m_cfOutput = on; }

Garfield::MediumSilicon::m_cfOutput

bool m_cfOutput

Definition MediumSilicon.hh:251

◆ GetDielectricFunction()

bool Garfield::MediumSilicon::GetDielectricFunction	(	const double	e,
		double &	eps1,
		double &	eps2,
		const unsigned int	i = 0 )

override

◆ GetDoping()

void Garfield::MediumSilicon::GetDoping	(	char &	type,
		double &	c ) const

Retrieve doping concentration.

◆ GetElectronBandPopulation()

int Garfield::MediumSilicon::GetElectronBandPopulation ( const int band )

◆ GetElectronCollisionRate()

double Garfield::MediumSilicon::GetElectronCollisionRate	(	const double	e,
		const int	band )

override

◆ GetElectronEnergy()

double Garfield::MediumSilicon::GetElectronEnergy	(	const double	px,
		const double	py,
		const double	pz,
		double &	vx,
		double &	vy,
		double &	vz,
		const int	band = 0 )

override

◆ GetElectronMomentum()

void Garfield::MediumSilicon::GetElectronMomentum	(	const double	e,
		double &	px,
		double &	py,
		double &	pz,
		int &	band )

override

◆ GetElectronNullCollisionRate()

double Garfield::MediumSilicon::GetElectronNullCollisionRate ( const int band )

override

◆ GetMaxElectronEnergy()

double Garfield::MediumSilicon::GetMaxElectronEnergy ( ) const

inline

Definition at line 105 of file MediumSilicon.hh.

105{ return m_cb[2].eFinal; }

Garfield::MediumSilicon::m_cb

std::array< Band, 3 > m_cb

Definition MediumSilicon.hh:292

◆ GetNumberOfElectronBands()

unsigned int Garfield::MediumSilicon::GetNumberOfElectronBands ( ) const

◆ GetNumberOfElectronCollisions() [1/2]

unsigned int Garfield::MediumSilicon::GetNumberOfElectronCollisions ( ) const

◆ GetNumberOfElectronCollisions() [2/2]

unsigned int Garfield::MediumSilicon::GetNumberOfElectronCollisions ( const unsigned int level ) const

◆ GetNumberOfLevels()

unsigned int Garfield::MediumSilicon::GetNumberOfLevels ( ) const

◆ GetOpticalDataRange()

bool Garfield::MediumSilicon::GetOpticalDataRange	(	double &	emin,
		double &	emax,
		const unsigned int	i = 0 )

override

◆ HoleAlpha()

double Garfield::MediumSilicon::HoleAlpha ( const double e ) const

private

◆ HoleAttachment()

bool Garfield::MediumSilicon::HoleAttachment	(	const double	ex,
		const double	ey,
		const double	ez,
		const double	bx,
		const double	by,
		const double	bz,
		double &	eta )

override

◆ HoleMobility() [1/2]

double Garfield::MediumSilicon::HoleMobility ( )

inlineoverride

Definition at line 140 of file MediumSilicon.hh.

140{ return m_hMu; }

Garfield::MediumSilicon::m_hMu

double m_hMu

Definition MediumSilicon.hh:202

◆ HoleMobility() [2/2]

double Garfield::MediumSilicon::HoleMobility ( const double e ) const

private

◆ HoleScatteringRates()

bool Garfield::MediumSilicon::HoleScatteringRates ( )

private

◆ HoleTownsend()

bool Garfield::MediumSilicon::HoleTownsend	(	const double	ex,
		const double	ey,
		const double	ez,
		const double	bx,
		const double	by,
		const double	bz,
		double &	alpha )

override

◆ HoleVelocity()

bool Garfield::MediumSilicon::HoleVelocity	(	const double	ex,
		const double	ey,
		const double	ez,
		const double	bx,
		const double	by,
		const double	bz,
		double &	vx,
		double &	vy,
		double &	vz )

override

◆ ImpurityScatteringRates()

bool Garfield::MediumSilicon::ImpurityScatteringRates	(	const double	kbt,
		Band &	band )

private

◆ Initialise()

bool Garfield::MediumSilicon::Initialise ( )

◆ InitialiseDOS()

void Garfield::MediumSilicon::InitialiseDOS ( )

private

◆ IntervalleyScatteringRates()

bool Garfield::MediumSilicon::IntervalleyScatteringRates	(	const double	rho,
		const double	kbt,
		const double	dtk,
		const double	eph,
		Band &	bndI,
		Band &	bndF,
		const double	zF,
		const int	collType )

private

◆ IonisationRates()

bool Garfield::MediumSilicon::IonisationRates	(	const std::vector< double > &	p,
		const std::vector< double > &	eth,
		const std::vector< double > &	b,
		Band &	band )

private

◆ IsSemiconductor()

bool Garfield::MediumSilicon::IsSemiconductor ( ) const

inlineoverride

Definition at line 21 of file MediumSilicon.hh.

21{ return true; }

◆ LoadOpticalData()

bool Garfield::MediumSilicon::LoadOpticalData ( const std::string & filename )

private

◆ OpticalScatteringRates()

bool Garfield::MediumSilicon::OpticalScatteringRates	(	const double	rho,
		const double	kbt,
		const double	dtk,
		const double	eph,
		Band &	band )

private

◆ ResetCollisionCounters()

void Garfield::MediumSilicon::ResetCollisionCounters ( )

◆ SetDiffusionScaling()

void Garfield::MediumSilicon::SetDiffusionScaling ( const double d )

inline

Apply a scaling factor to the diffusion coefficients.

Definition at line 101 of file MediumSilicon.hh.

101{ m_diffScale = d; }

Garfield::MediumSilicon::m_diffScale

double m_diffScale

Definition MediumSilicon.hh:189

◆ SetDoping()

void Garfield::MediumSilicon::SetDoping	(	const char	type,
		const double	c )

Set doping concentration [cm-3] and type ('i', 'n', 'p').

◆ SetDopingMobilityModelMasetti()

void Garfield::MediumSilicon::SetDopingMobilityModelMasetti ( )

Use the Masetti model for the doping-dependence of the mobility (default).

◆ SetDopingMobilityModelMinimos()

void Garfield::MediumSilicon::SetDopingMobilityModelMinimos ( )

Use the Minimos model for the doping-dependence of the mobility.

◆ SetHighFieldMobilityModel()

void Garfield::MediumSilicon::SetHighFieldMobilityModel ( const std::string & model )

Set the parameterisation to be used for the drift velocity as function of the electric field.

The currently implemented models are

Canali
Reggiani
Minimos
Constant (velocity increases linearly with the electric field) The default is Canali.

◆ SetHighFieldMobilityModelCanali()

void Garfield::MediumSilicon::SetHighFieldMobilityModelCanali ( )

Parameterize the high-field mobility using the Canali model (default).

◆ SetHighFieldMobilityModelConstant()

void Garfield::MediumSilicon::SetHighFieldMobilityModelConstant ( )

Make the velocity proportional to the electric field (no saturation).

◆ SetHighFieldMobilityModelMinimos()

void Garfield::MediumSilicon::SetHighFieldMobilityModelMinimos ( )

Parameterize the high-field mobility using the Minimos model.

◆ SetHighFieldMobilityModelReggiani()

void Garfield::MediumSilicon::SetHighFieldMobilityModelReggiani ( )

Parameterize the high-field mobility using the Reggiani model.

◆ SetImpactIonisationModel()

void Garfield::MediumSilicon::SetImpactIonisationModel ( const std::string & model )

Set the parameterisation to be used for calculating the impact ionisation coefficient.

The currently implemented models are

van Overstraeten - de Man
Okuto - Crowell
Massey
Grant The default is van Overstraeten - de Man.

◆ SetImpactIonisationModelGrant()

void Garfield::MediumSilicon::SetImpactIonisationModelGrant ( )

Calculate α using the Grant model.

◆ SetImpactIonisationModelMassey()

void Garfield::MediumSilicon::SetImpactIonisationModelMassey ( )

Calculate α using the Massey model.

◆ SetImpactIonisationModelOkutoCrowell()

void Garfield::MediumSilicon::SetImpactIonisationModelOkutoCrowell ( )

Calculate α using the Okuto-Crowell model.

◆ SetImpactIonisationModelVanOverstraetenDeMan()

void Garfield::MediumSilicon::SetImpactIonisationModelVanOverstraetenDeMan ( )

Calculate α using the van Overstraeten-de Man model (default).

◆ SetLatticeMobilityModel()

void Garfield::MediumSilicon::SetLatticeMobilityModel ( const std::string & model )

Set the parameterisation to be used for calculating the lattice mobility model.

The currently implemented models are

Sentaurus
Reggiani
Minimos The default is Sentaurus.

◆ SetLatticeMobilityModelMinimos()

void Garfield::MediumSilicon::SetLatticeMobilityModelMinimos ( )

Calculate the lattice mobility using the Minimos model.

◆ SetLatticeMobilityModelReggiani()

void Garfield::MediumSilicon::SetLatticeMobilityModelReggiani ( )

Calculate the lattice mobility using the Reggiani model.

◆ SetLatticeMobilityModelSentaurus()

void Garfield::MediumSilicon::SetLatticeMobilityModelSentaurus ( )

Calculate the lattice mobility using the Sentaurus model (default).

◆ SetLowFieldMobility()

void Garfield::MediumSilicon::SetLowFieldMobility	(	const double	mue,
		const double	muh )

Specify the low field values of the electron and hole mobilities.

◆ SetMaxElectronEnergy()

bool Garfield::MediumSilicon::SetMaxElectronEnergy ( const double e )

◆ SetSaturationVelocity()

void Garfield::MediumSilicon::SetSaturationVelocity	(	const double	vsate,
		const double	vsath )

Specify the saturation velocities of electrons and holes.

◆ SetSaturationVelocityModelCanali()

void Garfield::MediumSilicon::SetSaturationVelocityModelCanali ( )

Calculate the saturation velocities using the Canali model (default).

◆ SetSaturationVelocityModelMinimos()

void Garfield::MediumSilicon::SetSaturationVelocityModelMinimos ( )

Calculate the saturation velocities using the Minimos model.

◆ SetSaturationVelocityModelReggiani()

void Garfield::MediumSilicon::SetSaturationVelocityModelReggiani ( )

Calculate the saturation velocities using the Reggiani model.

◆ SetTrapCrossSection()

void Garfield::MediumSilicon::SetTrapCrossSection	(	const double	ecs,
		const double	hcs )

Trapping cross-sections for electrons and holes.

◆ SetTrapDensity()

void Garfield::MediumSilicon::SetTrapDensity ( const double n )

Trap density [cm-3], by default set to zero.

◆ SetTrappingTime()

void Garfield::MediumSilicon::SetTrappingTime	(	const double	etau,
		const double	htau )

Set time constant for trapping of electrons and holes [ns].

◆ Update()

bool Garfield::MediumSilicon::Update ( )

private

◆ UpdateDopingMobilityMasetti()

void Garfield::MediumSilicon::UpdateDopingMobilityMasetti ( )

private

◆ UpdateDopingMobilityMinimos()

void Garfield::MediumSilicon::UpdateDopingMobilityMinimos ( )

private

◆ UpdateHighFieldMobilityCanali()

void Garfield::MediumSilicon::UpdateHighFieldMobilityCanali ( )

private

◆ UpdateImpactIonisation()

void Garfield::MediumSilicon::UpdateImpactIonisation ( )

private

◆ UpdateLatticeMobility()

void Garfield::MediumSilicon::UpdateLatticeMobility ( )

private

◆ UpdateSaturationVelocity()

void Garfield::MediumSilicon::UpdateSaturationVelocity ( )

private

Member Data Documentation

◆ m_anisotropic

bool Garfield::MediumSilicon::m_anisotropic = true

private

Definition at line 254 of file MediumSilicon.hh.

◆ m_bandGap

double Garfield::MediumSilicon::m_bandGap = 1.12

private

Definition at line 191 of file MediumSilicon.hh.

◆ m_cb

std::array<Band, 3> Garfield::MediumSilicon::m_cb

private

Definition at line 292 of file MediumSilicon.hh.

◆ m_cbIndex

std::vector<size_t> Garfield::MediumSilicon::m_cbIndex

private

Definition at line 293 of file MediumSilicon.hh.

◆ m_cDop

double Garfield::MediumSilicon::m_cDop = 0.

private

Definition at line 195 of file MediumSilicon.hh.

◆ m_cfOutput

bool Garfield::MediumSilicon::m_cfOutput = false

private

Definition at line 251 of file MediumSilicon.hh.

◆ m_diffScale

double Garfield::MediumSilicon::m_diffScale = 1.

private

Definition at line 189 of file MediumSilicon.hh.

◆ m_dopingMobilityModel

DopingMobility Garfield::MediumSilicon::m_dopingMobilityModel = DopingMobility::Masetti

private

Definition at line 245 of file MediumSilicon.hh.

◆ m_dopingType

char Garfield::MediumSilicon::m_dopingType = 'i'

private

Definition at line 193 of file MediumSilicon.hh.

◆ m_eBetaCanali

double Garfield::MediumSilicon::m_eBetaCanali = 1.109

private

Definition at line 204 of file MediumSilicon.hh.

◆ m_eBetaCanaliInv

double Garfield::MediumSilicon::m_eBetaCanaliInv = 1. / 1.109

private

Definition at line 206 of file MediumSilicon.hh.

◆ m_egamma

std::vector<double> Garfield::MediumSilicon::m_egamma

private

Definition at line 315 of file MediumSilicon.hh.

◆ m_eHallFactor

double Garfield::MediumSilicon::m_eHallFactor = 1.15

private

Definition at line 215 of file MediumSilicon.hh.

◆ m_eImpactA0

double Garfield::MediumSilicon::m_eImpactA0 = 3.318e5

private

Definition at line 230 of file MediumSilicon.hh.

◆ m_eImpactA1

double Garfield::MediumSilicon::m_eImpactA1 = 0.703e6

private

Definition at line 231 of file MediumSilicon.hh.

◆ m_eImpactA2

double Garfield::MediumSilicon::m_eImpactA2 = 0.

private

Definition at line 232 of file MediumSilicon.hh.

◆ m_eImpactB0

double Garfield::MediumSilicon::m_eImpactB0 = 1.135e6

private

Definition at line 233 of file MediumSilicon.hh.

◆ m_eImpactB1

double Garfield::MediumSilicon::m_eImpactB1 = 1.231e6

private

Definition at line 234 of file MediumSilicon.hh.

◆ m_eImpactB2

double Garfield::MediumSilicon::m_eImpactB2 = 0.

private

Definition at line 235 of file MediumSilicon.hh.

◆ m_eMu

double Garfield::MediumSilicon::m_eMu = 1.35e-6

private

Definition at line 201 of file MediumSilicon.hh.

◆ m_eMuLat

double Garfield::MediumSilicon::m_eMuLat = 1.35e-6

private

Definition at line 198 of file MediumSilicon.hh.

◆ m_eps1

std::vector<double> Garfield::MediumSilicon::m_eps1

private

Definition at line 316 of file MediumSilicon.hh.

◆ m_eps2

std::vector<double> Garfield::MediumSilicon::m_eps2

private

Definition at line 317 of file MediumSilicon.hh.

◆ m_eRs

double Garfield::MediumSilicon::m_eRs = 1.35e-6 / 1.02e-2

private

Definition at line 212 of file MediumSilicon.hh.

◆ m_eStepDos

double Garfield::MediumSilicon::m_eStepDos = 0.

private

Definition at line 307 of file MediumSilicon.hh.

◆ m_eTrapCs

double Garfield::MediumSilicon::m_eTrapCs = 1.e-15

private

Definition at line 219 of file MediumSilicon.hh.

◆ m_eTrapDensity

double Garfield::MediumSilicon::m_eTrapDensity = 0.

private

Definition at line 221 of file MediumSilicon.hh.

◆ m_eTrapRate

double Garfield::MediumSilicon::m_eTrapRate = 0.

private

Definition at line 225 of file MediumSilicon.hh.

◆ m_eTrapTime

double Garfield::MediumSilicon::m_eTrapTime = 0.

private

Definition at line 223 of file MediumSilicon.hh.

◆ m_eVs

double Garfield::MediumSilicon::m_eVs = 1.02e-2

private

Definition at line 209 of file MediumSilicon.hh.

◆ m_fbDosC

std::vector<double> Garfield::MediumSilicon::m_fbDosC

private

Definition at line 310 of file MediumSilicon.hh.

◆ m_fbDosMaxC

double Garfield::MediumSilicon::m_fbDosMaxC

private

Definition at line 311 of file MediumSilicon.hh.

◆ m_fbDosMaxV

double Garfield::MediumSilicon::m_fbDosMaxV

private

Definition at line 311 of file MediumSilicon.hh.

◆ m_fbDosV

std::vector<double> Garfield::MediumSilicon::m_fbDosV

private

Definition at line 309 of file MediumSilicon.hh.

◆ m_fullBandDos

bool Garfield::MediumSilicon::m_fullBandDos = false

private

Definition at line 253 of file MediumSilicon.hh.

◆ m_hasUserMobility

bool Garfield::MediumSilicon::m_hasUserMobility = false

private

Definition at line 242 of file MediumSilicon.hh.

◆ m_hasUserSaturationVelocity

bool Garfield::MediumSilicon::m_hasUserSaturationVelocity = false

private

Definition at line 243 of file MediumSilicon.hh.

◆ m_hBetaCanali

double Garfield::MediumSilicon::m_hBetaCanali = 1.213

private

Definition at line 205 of file MediumSilicon.hh.

◆ m_hBetaCanaliInv

double Garfield::MediumSilicon::m_hBetaCanaliInv = 1. / 1.213

private

Definition at line 207 of file MediumSilicon.hh.

◆ m_hHallFactor

double Garfield::MediumSilicon::m_hHallFactor = 0.7

private

Definition at line 216 of file MediumSilicon.hh.

◆ m_highFieldMobilityModel

HighFieldMobility Garfield::MediumSilicon::m_highFieldMobilityModel = HighFieldMobility::Canali

private

Definition at line 247 of file MediumSilicon.hh.

◆ m_hImpactA0

double Garfield::MediumSilicon::m_hImpactA0 = 1.582e6

private

Definition at line 236 of file MediumSilicon.hh.

◆ m_hImpactA1

double Garfield::MediumSilicon::m_hImpactA1 = 0.671e6

private

Definition at line 237 of file MediumSilicon.hh.

◆ m_hImpactB0

double Garfield::MediumSilicon::m_hImpactB0 = 2.036e6

private

Definition at line 238 of file MediumSilicon.hh.

◆ m_hImpactB1

double Garfield::MediumSilicon::m_hImpactB1 = 1.693e6

private

Definition at line 239 of file MediumSilicon.hh.

◆ m_hMu

double Garfield::MediumSilicon::m_hMu = 0.45e-6

private

Definition at line 202 of file MediumSilicon.hh.

◆ m_hMuLat

double Garfield::MediumSilicon::m_hMuLat = 0.45e-6

private

Definition at line 199 of file MediumSilicon.hh.

◆ m_hRs

double Garfield::MediumSilicon::m_hRs = 0.45e-6 / 0.72e-2

private

Definition at line 213 of file MediumSilicon.hh.

◆ m_hTrapCs

double Garfield::MediumSilicon::m_hTrapCs = 1.e-15

private

Definition at line 220 of file MediumSilicon.hh.

◆ m_hTrapDensity

double Garfield::MediumSilicon::m_hTrapDensity = 0.

private

Definition at line 222 of file MediumSilicon.hh.

◆ m_hTrapRate

double Garfield::MediumSilicon::m_hTrapRate = 0.

private

Definition at line 226 of file MediumSilicon.hh.

◆ m_hTrapTime

double Garfield::MediumSilicon::m_hTrapTime = 0.

private

Definition at line 224 of file MediumSilicon.hh.

◆ m_hVs

double Garfield::MediumSilicon::m_hVs = 0.72e-2

private

Definition at line 210 of file MediumSilicon.hh.

◆ m_impactIonisationModel

ImpactIonisation Garfield::MediumSilicon::m_impactIonisationModel = ImpactIonisation::VanOverstraeten

private

Definition at line 248 of file MediumSilicon.hh.

◆ m_invStepDos

double Garfield::MediumSilicon::m_invStepDos = 0.

private

Definition at line 308 of file MediumSilicon.hh.

◆ m_latticeMobilityModel

LatticeMobility Garfield::MediumSilicon::m_latticeMobilityModel = LatticeMobility::Sentaurus

private

Definition at line 244 of file MediumSilicon.hh.

◆ m_mutex

std::mutex Garfield::MediumSilicon::m_mutex

private

Definition at line 186 of file MediumSilicon.hh.

◆ m_nCollElectronAcoustic

unsigned int Garfield::MediumSilicon::m_nCollElectronAcoustic = 0

private

Definition at line 298 of file MediumSilicon.hh.

◆ m_nCollElectronBand

std::vector<unsigned int> Garfield::MediumSilicon::m_nCollElectronBand

private

Definition at line 304 of file MediumSilicon.hh.

◆ m_nCollElectronDetailed

std::vector<unsigned int> Garfield::MediumSilicon::m_nCollElectronDetailed

private

Definition at line 303 of file MediumSilicon.hh.

◆ m_nCollElectronImpurity

unsigned int Garfield::MediumSilicon::m_nCollElectronImpurity = 0

private

Definition at line 301 of file MediumSilicon.hh.

◆ m_nCollElectronIntervalley

unsigned int Garfield::MediumSilicon::m_nCollElectronIntervalley = 0

private

Definition at line 300 of file MediumSilicon.hh.

◆ m_nCollElectronIonisation

unsigned int Garfield::MediumSilicon::m_nCollElectronIonisation = 0

private

Definition at line 302 of file MediumSilicon.hh.

◆ m_nCollElectronOptical

unsigned int Garfield::MediumSilicon::m_nCollElectronOptical = 0

private

Definition at line 299 of file MediumSilicon.hh.

◆ m_nonParabolic

bool Garfield::MediumSilicon::m_nonParabolic = true

private

Definition at line 252 of file MediumSilicon.hh.

◆ m_opticalDataFile

std::string Garfield::MediumSilicon::m_opticalDataFile = "OpticalData_Si.txt"

private

Definition at line 314 of file MediumSilicon.hh.

◆ m_saturationVelocityModel

SaturationVelocity Garfield::MediumSilicon::m_saturationVelocityModel = SaturationVelocity::Canali

private

Definition at line 246 of file MediumSilicon.hh.

◆ m_trappingModel

int Garfield::MediumSilicon::m_trappingModel = 0

private

Definition at line 227 of file MediumSilicon.hh.

◆ m_vb

Band Garfield::MediumSilicon::m_vb

private

Definition at line 295 of file MediumSilicon.hh.

The documentation for this class was generated from the following file:

/builds/garfield/docs/source/Include/Garfield/MediumSilicon.hh

Classes

Public Member Functions

Private Types

Private Member Functions

Private Attributes

Detailed Description

Member Enumeration Documentation

◆ DopingMobility

◆ HighFieldMobility

◆ ImpactIonisation

◆ LatticeMobility

◆ SaturationVelocity

Constructor & Destructor Documentation

◆ MediumSilicon()

◆ ~MediumSilicon()

Member Function Documentation

◆ AcousticScatteringRates()

◆ ComputeDOS()

◆ ComputeSecondaries()

◆ ElectronAlpha()

◆ ElectronAttachment()

◆ ElectronCollision()

◆ ElectronMobility() [1/2]

◆ ElectronMobility() [2/2]

◆ ElectronScatteringRates()

◆ ElectronTownsend()

◆ ElectronVelocity()

◆ EnableAnisotropy()

◆ EnableFullBandDensityOfStates()

◆ EnableNonParabolicity()

◆ EnableScatteringRateOutput()

◆ GetDielectricFunction()

◆ GetDoping()

◆ GetElectronBandPopulation()

◆ GetElectronCollisionRate()

◆ GetElectronEnergy()

◆ GetElectronMomentum()

◆ GetElectronNullCollisionRate()

◆ GetMaxElectronEnergy()

◆ GetNumberOfElectronBands()

◆ GetNumberOfElectronCollisions() [1/2]

◆ GetNumberOfElectronCollisions() [2/2]

◆ GetNumberOfLevels()

◆ GetOpticalDataRange()

◆ HoleAlpha()

◆ HoleAttachment()

◆ HoleMobility() [1/2]

◆ HoleMobility() [2/2]

◆ HoleScatteringRates()

◆ HoleTownsend()

◆ HoleVelocity()

◆ ImpurityScatteringRates()

◆ Initialise()

◆ InitialiseDOS()

◆ IntervalleyScatteringRates()

◆ IonisationRates()

◆ IsSemiconductor()

◆ LoadOpticalData()

◆ OpticalScatteringRates()

◆ ResetCollisionCounters()

◆ SetDiffusionScaling()

◆ SetDoping()

◆ SetDopingMobilityModelMasetti()

◆ SetDopingMobilityModelMinimos()

◆ SetHighFieldMobilityModel()

◆ SetHighFieldMobilityModelCanali()

◆ SetHighFieldMobilityModelConstant()

◆ SetHighFieldMobilityModelMinimos()

◆ SetHighFieldMobilityModelReggiani()

◆ SetImpactIonisationModel()

◆ SetImpactIonisationModelGrant()

◆ SetImpactIonisationModelMassey()

◆ SetImpactIonisationModelOkutoCrowell()

◆ SetImpactIonisationModelVanOverstraetenDeMan()

◆ SetLatticeMobilityModel()

◆ SetLatticeMobilityModelMinimos()

◆ SetLatticeMobilityModelReggiani()

◆ SetLatticeMobilityModelSentaurus()

◆ SetLowFieldMobility()

◆ SetMaxElectronEnergy()